Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effect of reactive ion etching on the a-face, an important aspect of processing optimum power devices. We correlate electrical measurements, i.e. current-voltage (I-V) and capacitance-voltage (C-V) with physical characterization including X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS).
Book Details: |
|
ISBN-13: |
978-3-639-71248-3 |
ISBN-10: |
363971248X |
EAN: |
9783639712483 |
Book language: |
English |
By (author) : |
Gang Liu |
Number of pages: |
124 |
Published on: |
2014-03-17 |
Category: |
Electronics, electro-technology, communications technology |